Die Photographs	Specifications
	High Integrated Bio-Signal Sensor Interface IC -PDK: Tsmc 180nm RF Process -Fucntion: EIT, CDC, pMMG and EIT -Core Supply: 1.8V/1.2V -Power Consumption: 5mW Measurement in Progress
	Wide Bandwidth Continuous-Time Noise-Shaping SAR ADC -PDK: Tsmc 28nm RF Process -Fucntion: Analog-to-Digital Conversion -Application: Wireless Communication -Architecture: CT ΔΣM + NS-SAR -Core Supply: 1.3V/1.0V -Full Scale: 2.0V -Power Consumption: 1mW -Operating Frequency: 400MHz -Bandwidth: 10.5MHz -SNDR: 71dB Preparing for VLSI'24
	High Power Efficient Capacitor-to-Digital Converter -PDK: Tsmc 180nm RF Process -Fucntion: Capacitor-to-Digital Conversion -Application: Wearable Smart Device -Architecture: CVC + LPF + Highpass NS-SAR -Core Supply: 1.2V -Cap. Range: 0 - 5.12pF -Power Consumption: 24.1µW -Operating Frequency: 200KHz -Bandwidth: 1.5KHz -Resolution: 5.85aFrms @2.56pF -FoMS: 187dB Published in VLSI'23 (C18-3)
	Low Power Passive Bandpass DSM -PDK: Samsung 28nm FDSOI Process -Fucntion: Analog-to-Digital Conversion -Application: Wireless Communication -Architecture: 2-Path Transformation + Highpass NS-SAR -Core Supply: 1.1V -Full Scale: 2.2V -Power Consumption: 2.5mW -Operating Frequency: 240MHz -Bandwidth: 12MHz -Intermediate Frequency: 60MHz -SNDR: 69dB Published in VLSI'23 (C18-4)
	Enose Sensor -PDK: Samsung 28nm LPP Process -Architecture: SAW Oscillator + ΔΣ Time-to-Digital Converter -Application: Gas Sensor -Type: SH-SAW Stiffness Sensor -Sensing Film: Polymer -Resonant Frequency: 2.5GHz -Power: 10mW Under Revision
	Wide DR Pipelined Noise Shaping SAR ADC -PDK: Tsmc 65nm GP Process -Fucntion: Analog-to-Digital Conversion -Application: Internet-of-Things -Architecture: Pipeline + NS-SAR -Core Supply: 1.2V -Full Scale: 2.4V -Power Consumption: 3.5mW -Operating Frequency: 83MHz -Bandwidth: 4MHz -Dynmic Range: 85dB Published in CICC'20 (23-3) and JSSC'21